The interaction between spin polarized current and ferromagnetic domain walls in SrRuO₃: The issue of interaction between current and domain walls is of great importance both for basic research and applications since current-induced manipulation of domain walls is one of the most promising routes to control magnetic configurations on the nano scale which is needed in novel spintronic devices. The special importance our work in this area is in the unique insight it provides for these phenomena in the limit of very narrow domain walls which are found in the material system he has studied – SrRuO₃. The research included a comprehensive study of the effect of domain walls on the electrical current (e.g., PRL 84, 6090 [2000], PRB 67, 134436 [2003]) and the effect of current on domain walls (e.g., PRL 98, 247204 [2007]). The research in this area continues and it focuses now on magnetic nucleation effects and current-induced magnetic dynamics.

The planar Hall effect –  basic research and applications: The planar Hall effect is the emergence of transverse voltage in a conductor as a function of the magnitude and orientation of in-plane magnetization.  Following the discovery of giant planar Hall effect in colossal magnetoresistance manganese-based perovskites (manganites) in the group of Prof. Klein (APL 84, 2593 [2004]), the group has pursued two routes. One route focused on elucidating the phenomenon and resolving the intriguing observations which led, among other, to the development of transport equations which consider crystal-symmetry effects (PRB 79, 092406 [2009]). The other route focused on using the effect for the development of novel magnetic random access memory (JAP 99, 08R701 [2006], US patent 7,684,147) and sensitive magnetic sensors (JAP, in press).  The research in this area continues in the two routes. In the basic research route, the planar Hall effect is used for elucidating the intriguing interplay between magnetism and electrical transport in manganites of different compositions and dopings. In the applicative route, there is an effort to develop better memory bits and magnetic sensors by fine tuning growth and nano-fabrication, developing analytical models, and using numerical simulations.